| PART |
Description |
Maker |
| 2SD2118 2SD2097 2SD2098 2SD2098_1 |
Low VCE(sat) transistor (strobe flash)
|
ROHM[Rohm]
|
| KSC2982 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DT |
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC5030 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE STROBE FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST9504 |
4K serial SPI EEPROM with positive clock strobe
4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE
(ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe
MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id
4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM，带有正时钟选
SPI Serial EEPROM SPI串行EEPROM
2K serial SPI EEPROM with positive clock strobe
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| 2SC503004 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G133 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G13206 GT8G132 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
